Large energy-loss straggling of swift heavy ions in ultra-thin active silicon layers-Reference-Cited by-同舟云学术

Large energy-loss straggling of swift heavy ions in ultra-thin active silicon layers

Published:2013-09 Issue:9 Volume:22 Page:096103
ISSN:1674-1056
Container-title:Chinese Physics B
language:
Short-container-title:Chinese Phys. B

Author:

Zhang Zhan-Gang,Liu Jie,Hou Ming-Dong,Sun You-Mei,Zhao Fa-Zhan,Liu Gang,Han Zheng-Sheng,Geng Chao,Liu Jian-De,Xi Kai,Duan Jing-Lai,Yao Hui-Jun,Mo Dan,Luo Jie,Gu Song,Liu Tian-Qi

Publisher

IOP Publishing

Subject

General Physics and Astronomy

Link

http://stacks.iop.org/1674-1056/22/i=9/a=096103/pdf

Reference34 articles.

1. Parasitic bipolar amplification in a single event transient and its temperature dependence

2. New insight into the parasitic bipolar amplification effect in single event transient production

3. Straggling in thin silicon detectors

4. Inelastic electronic collision cross sections for Monte Carlo calculations

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