Improved performance of AlGaN/GaN HEMT by N 2 O plasma pre-treatment
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy
Link
https://iopscience.iop.org/article/10.1088/1674-1056/24/2/027303/pdf
Reference13 articles.
1. V-Gate GaN HEMTs for X-Band Power Applications
2. Si3N4/AlGaN/GaN–metal–insulator–semiconductor heterostructure field–effect transistors
Cited by 6 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Improved device performance of recessed-gate AlGaN/GaN HEMTs by using in-situ N2O radical treatment;Chinese Physics B;2022-05-01
2. Effects of Si δ-Doped Layer on an AlGaN/InGaN/GaN High Electron Mobility Transistor;Journal of Electronic Materials;2021-06-27
3. Improved performance of fully-recessed normally-off LPCVD SiN/GaN MISFET using N2O plasma pretreatment;Solid-State Electronics;2019-06
4. Investigation of enhancement-mode AlGaN/GaN nanowire channel high-electron-mobility transistor with oxygen-containing plasma treatment;Applied Physics Express;2017-04-12
5. Piezoelectric polarization and quantum size effects on the vertical transport in AlGaN/GaN resonant tunneling diodes;Chinese Physics B;2016-06
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