Enhanced light extraction of GaN-based light-emitting diodes with periodic textured SiO 2 on Al-doped ZnO transparent conductive layer
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy
Link
https://iopscience.iop.org/article/10.1088/1674-1056/25/7/078502/pdf
Reference19 articles.
1. Current crowding and optical saturation effects in GaInN/GaN light-emitting diodes grown on insulating substrates
2. High-transparency Ni/Au ohmic contact to p-type GaN
3. Past achievements and future challenges in the development of optically transparent electrodes
4. Low-resistance and high-transparency Ni/indium tin oxide ohmic contacts to p-type GaN
5. Characteristics of GaN-based LEDs using Ga-doped or In-doped ZnO transparent conductive layers grown by atomic layer deposition
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