Digital and analog memory devices based on 2D layered MPS3 (M = Mn, Co, Ni) materials*

Abstract

We demonstrate digital and analog devices with an Ag/MPS3/Au structure based on layered MPS3 (M = Mn, Co, Ni) 2D materials. All devices show the bipolar behavior of resistive switching. In addition, Ag/MnPS3/Au and Ag/NiPS3/Au devices show synaptic characteristics of potentiation and depression. The digital and analog characteristics of resistance states enable Ag/MPS3/Au devices to work as both binary memory and artificial synapse devices. The Ag/MPS3/Au memory devices are promising for applications of flexible eye-like and brain-like systems on a chip when they are integrated with photodetectors and FETs composed of full MPS3 materials.