Characterization of vertical Au/ β -Ga 2 O 3 single-crystal Schottky photodiodes with MBE-grown high-resistivity epitaxial layer
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy
Link
https://iopscience.iop.org/article/10.1088/1674-1056/25/1/017201/pdf
Reference18 articles.
1. Gallium oxide (Ga2O3) metal-semiconductor field-effect transistors on single-crystal β-Ga2O3 (010) substrates
2. A comprehensive review of ZnO materials and devices
3. Fabrication of a transparent ultraviolet detector by using n-type Ga2O3 and p-type Ga-doped SnO2 core–shell nanowires
4. Study of photoresponsivity in optoelectronic devices based on single crystal β-Ga2O3epitaxial layers
5. Field-induced current modulation in epitaxial film of deep-ultraviolet transparent oxide semiconductor Ga2O3
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1. High-performance β-Ga2O3 Schottky barrier diodes and metal-semiconductor field-effect transistors on a high doping level epitaxial layer;Journal of Alloys and Compounds;2023-04
2. A review of Ga2O3 deep-ultraviolet metal–semiconductor Schottky photodiodes;Journal of Physics D: Applied Physics;2023-02-16
3. Dramatic reduction in dark current of β-Ga2O3 ultraviolet photodectors via β-(Al0.25Ga0.75)2O3 surface passivation;Chinese Physics B;2023-01-01
4. Nanoscale Characterization of Chemical and Structural Properties of the Au/(100) β-Ga2O3 Interface;ACS Applied Electronic Materials;2022-08-30
5. Self-powered solar-blind photodiodes based on EFG-grown (100)-dominant β-Ga2O3 substrate*;Chinese Physics B;2021-01-01
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