Electronic and optical properties of GaN/AlN quantum dots with adjacent threading dislocations
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy
Reference16 articles.
1. Quantitative characterization of GaN quantum-dot structures in AlN by high-resolution transmission electron microscopy
2. Quantum confined Stark effect in single self-assembled GaN/AlN quantum dots
3. Blue-light emission from GaN self-assembled quantum dots due to giant piezoelectric effect
4. Intrinsic electric field effects on few-particle interactions in coupled GaN quantum dots
5. Preferential nucleation of GaN quantum dots at the edge of AlN threading dislocations
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1. Numerical investigation on threading dislocation bending with InAs/GaAs quantum dots*;Chinese Physics B;2021-11-01
2. Electroluminescent energy transfer of hybrid quantum dotsdevice;Acta Physica Sinica;2014
3. Effect of high-temperature buffer thickness on quality of AlN epilayer grown on sapphire substrate by metalorganic chemical vapor deposition;Chinese Physics B;2013-05
4. Analysis of strained nitride quantum dots as threading dislocation filters;Solid State Sciences;2011-09
5. Electronic structures of stacked layers quantum dots: influence of the non-perfect alignment and the applied electric field;Chinese Physics B;2011-02
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