Intrinsic charge transport behaviors in graphene-black phosphorus van der Waals heterojunction devices-Reference-Cited by-同舟云学术

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Intrinsic charge transport behaviors in graphene-black phosphorus van der Waals heterojunction devices

Published:2018-07 Issue:7 Volume:27 Page:077303
ISSN:1674-1056
Container-title:Chinese Physics B
language:
Short-container-title:Chinese Phys. B

Author:

Wang Guo-Cai,Wu Liang-Mei,Yan Jia-Hao,Zhou Zhang,Ma Rui-Song,Yang Hai-Fang,Li Jun-Jie,Gu Chang-Zhi,Bao Li-Hong,Du Shi-Xuan,Gao Hong-Jun

Publisher

IOP Publishing

Subject

General Physics and Astronomy

Link

https://iopscience.iop.org/article/10.1088/1674-1056/27/7/077303/pdf

Reference45 articles.

1. The rise of graphene

2. Two-dimensional atomic crystals

3. Graphene transistors

4. Single-layer MoS2 transistors

5. Electronics based on two-dimensional materials

Cited by 6 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Application of Metals and Their Compounds/Black Phosphorus-Based Nanomaterials in the Direction of Photocatalytic Hydrogen Evolution;Coatings;2024-09-05

2. Lithography-free and high-efficiency preparation of black phosphorous devices by direct evaporation through shadow mask;Nanotechnology;2022-03-08

3. Modulation of the second-harmonic generation in MoS2 by graphene covering*;Chinese Physics B;2021-02-01

4. Electrostatic gating of solid-ion-conductor on InSe flakes and InSe/h-BN heterostructures*;Chinese Physics B;2020-10-01

5. High performance terahertz anisotropic absorption in graphene–black phosphorus heterostructure*;Chinese Physics B;2020-08-01

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