Influence of deep defects on electrical properties of Ni/4H-SiC Schottky diode
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy
Link
https://iopscience.iop.org/article/10.1088/1674-1056/28/2/027303/pdf
Reference37 articles.
1. Silicon-carbide high-voltage (400 V) Schottky barrier diodes
2. Design considerations and experimental analysis of high-voltage SiC Schottky barrier rectifiers
3. A 3 kV Schottky barrier diode in 4H-SiC
4. Electron transport at metal-semiconductor interfaces: General theory
5. Ni/SiC–6H Schottky Barrier Diode interfacial states characterization related to temperature
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1. Analysis of Defects and Electrical Characteristics of Variable-Temperature Proton-Irradiated 4H-SiC JBS Diodes;Electronics;2022-04-22
2. Defect Inspection Techniques in SiC;Nanoscale Research Letters;2022-03-04
3. Electron trapping effects in SiC Schottky diodes: Review and comment;Microelectronics Reliability;2021-12
4. Experimental and Physics-Based Study of the Schottky Barrier Height Inhomogeneity and Associated Traps Affecting 3C-SiC-on-Si Schottky Barrier Diodes;IEEE Transactions on Industry Applications;2021-09
5. Research status and progress of metal contacts of SiC power devices;Acta Physica Sinica;2021
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