Ni/SiC–6H Schottky Barrier Diode interfacial states characterization related to temperature
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Metals and Alloys,Mechanical Engineering,Mechanics of Materials
Reference39 articles.
1. Electrical characterization of Au/3C-SiC/n-Si/Al Schottky junction
2. Electrical and optical characteristics of Au/PbS/n-6H–SiC structures prepared by electrodeposition of PbS thin film on n-type 6H–SiC substrate
3. Fabrication of 1.2 kV Ni/4H-SiC Junction Barrier-Controlled Schottky Diodes with a Single P+ Ion-Implantation Process
4. Capacitance–conductance spectroscopic investigation of interfacial oxide layer in Ni/4H–SiC (0001) Schottky diode
5. Solid state reaction of ruthenium with silicon carbide, and the implications for its use as a Schottky contact for high temperature operating Schottky diodes
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1. Carbon Nanotubes/N-Si Heterojunction with High Dielectric Constant and Rectification Ratio, Low Dielectric Loss Tangent;ECS Journal of Solid State Science and Technology;2022-02-01
2. Experimental and Physics-Based Study of the Schottky Barrier Height Inhomogeneity and Associated Traps Affecting 3C-SiC-on-Si Schottky Barrier Diodes;IEEE Transactions on Industry Applications;2021-09
3. Effect of metallic contacts diffusion on Au/GaAs and Au/GaN/GaAs SBDs electrical quality during their fabrication process;Journal of Alloys and Compounds;2021-09
4. Analysis and Comparison of the Main Electrical Characteristics of Cu/n-type Si metal semiconductor structures at wide temperature Range;Silicon;2021-05-01
5. An experimental study on determination of the shottky diode current-voltage characteristic depending on temperature with artificial neural network;Physica B: Condensed Matter;2021-05
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