Effect of bias condition on heavy ion radiation in bipolar junction transistors
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy
Link
https://iopscience.iop.org/article/10.1088/1674-1056/21/8/080703/pdf
Reference24 articles.
1. Proton radiation response mechanisms in bipolar analog circuits
2. Identification of degradation mechanisms in a bipolar linear voltage comparator through correlation of transistor and circuit response
3. Total dose effects on negative voltage regulator
4. Models for Total Dose Degradation of Linear Integrated Circuits
5. Combined Radiation Effects of Protons and Electrons on NPN Transistors
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1. The effects and mechanisms of 2 MeV proton irradiation on high bias conditions of InP/InGaAs DHBTs;Solid-State Electronics;2024-02
2. Bulk and surface damages in complementary bipolar junction transistors produced by high dose irradiation;Chinese Physics B;2018-01
3. Radiation damage and defects in NPN bipolar junction transistors irradiated by silicon ions with various energies;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2017-10
4. Radiation defects studies on silicon bipolar junction transistor irradiated by Br ions and electrons;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2015-12
5. Radiation Defects and Annealing Study on PNP Bipolar Junction Transistors Irradiated by 3-MeV Protons;IEEE Transactions on Nuclear Science;2015-12
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