A novel enhancement mode AlGaN/GaN high electron mobility transistor with split floating gates
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy
Link
https://iopscience.iop.org/article/10.1088/1674-1056/26/4/047305/pdf
Reference20 articles.
1. Enhancement-mode AlGaN/GaN HEMT and MIS-HEMT technology
2. Control of Threshold Voltage of AlGaN/GaN HEMTs by Fluoride-Based Plasma Treatment: From Depletion Mode to Enhancement Mode
3. Development of enhancement mode AlN/GaN high electron mobility transistors
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2. Characterization of ion irradiated silicon surfaces ablated by laser-induced breakdown spectroscopy;Chinese Physics B;2018-08
3. An Al 0.25 Ga 0.75 N/GaN Lateral Field Emission Device with a Nano Void Channel;Chinese Physics Letters;2018-03
4. A Charge Storage Based Enhancement Mode AlGaN/GaN High Electron Mobility Transistor;Materials Science Forum;2018-02
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