Interface states study of intrinsic amorphous silicon for crystalline silicon surface passivation in HIT solar cell *
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy
Link
https://iopscience.iop.org/article/10.1088/1674-1056/26/4/048104/pdf
Reference33 articles.
1. Achievement of More Than 25% Conversion Efficiency With Crystalline Silicon Heterojunction Solar Cell
2. 24.7% Record Efficiency HIT Solar Cell on Thin Silicon Wafer
3. Abruptness of a-Si:H∕c-Si interface revealed by carrier lifetime measurements
4. Interplay of amorphous silicon disorder and hydrogen content with interface defects in amorphous/crystalline silicon heterojunctions
5. Structural, hydrogen bonding andin situstudies of the effect of hydrogen dilution on the passivation by amorphous silicon of n-type crystalline (1 0 0) silicon surfaces
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2. Insight into conduction band density of states at c-Si/TiO2 interface for efficient heterojunction solar cell;Physica Scripta;2023-09-21
3. Effect of Antenna-Substrate Distance on Quality of a-Si:H During ICP CVD Using a Flat Spiral Antenna;IEEE Transactions on Plasma Science;2021-02
4. The n-type Si-based materials applied on the front surface of IBC-SHJ solar cells*;Chinese Physics B;2019-08-01
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