Structural, electronic, optical, elastic properties and Born effective charges of monoclinic HfO 2 from first-principles calculations
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy
Link
https://iopscience.iop.org/article/10.1088/1674-1056/23/4/047101/pdf
Reference71 articles.
1. Determination of electron effective mass and electron affinity in HfO2 using MOS and MOSFET structures
2. Point defects in HfO2 high K gate oxide
3. Improved interface properties of an HfO2gate dielectric GaAs MOS device by using SiNxas an interfacial passivation layer
4. Defect energy levels in HfO2 high-dielectric-constant gate oxide
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