Growth of high-crystallinity uniform GaAs nanowire arrays by molecular beam epitaxy*

Abstract

The self-catalyzed growth of GaAs nanowires (NWs) on silicon (Si) is an effective way to achieve integration between group III–V elements and Si. High-crystallinity uniform GaAs NW arrays were grown by solid-source molecular beam epitaxy (MBE). In this paper, we describe systematic experiments which indicate that the substrate treatment is crucial to the highly crystalline and uniform growth of one-dimensional nanomaterials. The influence of natural oxidation time on the crystallinity and uniformity of GaAs NW arrays was investigated and is discussed in detail. The GaAs NW crystallinity and uniformity are maximized after 20 days of natural oxidation time. This work provides a new solution for producing high-crystallinity uniform III–V nanowire arrays on wafer-scale Si substrates. The highly crystalline uniform NW arrays are expected to be useful for NW-based optical interconnects and Si platform optoelectronic devices.