An improved EEHEMT model for kink effect on AlGaN/GaN HEMT
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy
Link
https://iopscience.iop.org/article/10.1088/1674-1056/23/8/087201/pdf
Reference11 articles.
1. AlGaN/GaN HEMTs on SiC with f/sub T/ of over 120 GHz
2. High-temperature performance of AlGaN/GaN HFETs on SiC substrates
3. Investigation of AlGaN/GaN fluorine plasma treatment enhancement-mode high electronic mobility transistors by frequency-dependent capacitance and conductance analysis
4. Electric-stress reliability and current collapse of different thickness SiN x passivated AlGaN/GaN high electron mobility transistors
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2. Extrinsic equivalent circuit modeling of InP HEMTs based on full-wave electromagnetic simulation;Chinese Physics B;2021-09-29
3. A fast small signal modeling method for GaN HEMTs;Solid-State Electronics;2021-01
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5. Extraction method for parasitic capacitances and inductances of HEMT models;Solid-State Electronics;2017-03
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