Evolution of two-dimensional plasma parameters in the plane of the wafer during the E- to H- and H- to E-mode transition in an inductively coupled plasma-Reference-Cited by-同舟云学术

Evolution of two-dimensional plasma parameters in the plane of the wafer during the E- to H- and H- to E-mode transition in an inductively coupled plasma

Published:2018-05-25 Issue:5 Volume:27 Page:055018
ISSN:1361-6595
Container-title:Plasma Sources Science and Technology
language:
Short-container-title:Plasma Sources Sci. Technol.

Author:

Park Il-Seo,Kim Kyung-Hyun,Kim Tae-Woo,Kim Kwan-Youg,Moon Ho-Jun,Chung Chin-Wook^ORCID

Funder

National Research Foundation of Korea

Ministry of Trade, Industry and Energy

Publisher

IOP Publishing

Subject

Condensed Matter Physics

Link

http://iopscience.iop.org/article/10.1088/1361-6595/aac241/pdf

Reference37 articles.

1. The effects of radio-frequency bias on electron density in an inductively coupled plasma reactor

2. Effects of rf-bias power on plasma parameters in a low gas pressure inductively coupled plasma

3. Experimental investigation on plasma parameter profiles on a wafer level with reactor gap lengths in an inductively coupled plasma

4. Two-dimensional-spatial distribution measurement of electron temperature and plasma density in low temperature plasmas

5. Mode transition in magnetic pole enhanced inductively coupled argon plasmas

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