Valence band averages in silicon: Anisotropy and non-parabolicity
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,General Engineering,Condensed Matter Physics
Link
http://stacks.iop.org/0022-3719/14/i=21/a=011/pdf
Reference14 articles.
1. Rotational relaxation of HD below 40 K
2. On the interpretation of the observed hole mass shift with Uniaxial stress in silicon
3. The electron-hole liquid in a polar semiconductor: Cubic SiC
4. Energy-Band Structure of Germanium and Silicon: The k·p Method
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