Semiempirical calculation of deep levels: divacancy in Si
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,General Engineering,Condensed Matter Physics
Link
http://stacks.iop.org/0022-3719/6/i=23/a=017/pdf
Reference30 articles.
1. New Method for Treating Lattice Point Defects in Covalent Crystals
2. Theory of Scattering in Solids
3. Localized Defects in Semiconductors: The Divacancy in Silicon
4. Infrared Spectroscopy of Divacancy-Associated Radiation-Induced Absorption Bands in Silicon
5. 3.9 μ photoconductivity band in neutron-irradiated p-type silicon
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1. First-principles study of the structure and energetics of neutral divacancies in silicon;Physical Review B;1996-04-15
2. Electronic structure of the silicon divacancy;Physical Review B;1990-12-15
3. First- and second-nearest-neighbor divacancies in silicon: Origin and ordering of gap levels;Physical Review B;1988-08-15
4. Evaluation of semiempirical quantum-chemical methods in solid-state applications. II. Cyclic-cluster calculations of silicon;Physical Review B;1987-12-15
5. EHT cluster calculations of deep-level defects in Si without dangling bonds;Journal of Physics C: Solid State Physics;1985-07-10
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