3.9 μ photoconductivity band in neutron-irradiated p-type silicon-Reference-Cited by-同舟云学术

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3.9 μ photoconductivity band in neutron-irradiated p-type silicon

Published:1967-06 Issue:13 Volume:24 Page:729-731
ISSN:0375-9601
Container-title:Physics Letters A
language:en
Short-container-title:Physics Letters A

Author:

Cheng L.J.

Publisher

Elsevier BV

Subject

General Physics and Astronomy

Reference7 articles.

1. Electron radiation damage in semiconductors and metals;Corbett,1966

2. K. Matsui, Ph.D. Thesis, University of Paris, France.

3. 1.8-, 3.3-, and 3.9-μ Bands in Irradiated Silicon: Correlations with the Divacancy

Cited by 19 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Intrinsic Point Defects;Computational Microelectronics;2004

2. Photoionization cross section of electron irradiation induced levels in silicon;Journal of Applied Physics;1983-09

3. Impact of Defects Formed in Neutron Transmutation Doping of Silicon on Device Performance;Neutron-Transmutation-Doped Silicon;1981

4. Investigation of neutron‐produced defects in silicon by transconductance measurements of junction field‐effect transistors;Journal of Applied Physics;1976-11

5. Piezospectroscopical investigation of defects in silicon;Journal of Applied Spectroscopy;1976-11

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