Impact ionization thresholds in semiconductors
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,General Engineering,Condensed Matter Physics
Link
http://stacks.iop.org/0022-3719/6/i=16/a=011/pdf
Reference17 articles.
1. Transition probability of impact ionization in silicon
2. Threshold Energies for Electron-Hole Pair Production by Impact Ionization in Semiconductors
3. On the theory of the spectral dependence of the quantum efficiency of homopolar crystals
4. A note on the theory of the quantum efficiency of germanium and silicon
5. Threshold energy for electron-hole pair production in a semiconductor
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1. Impact Ionization Rate of Electrons in Bilayer Graphene Nanoribbons;Journal of Electronic Materials;2019-08-19
2. Carrier scattering and impact ionization in bilayer graphene;Journal of Computational Electronics;2013-09-12
3. Theory of Ionization Mechanism in Graphene Nanoribbons;Journal of Computational and Theoretical Nanoscience;2012-12-01
4. Impact ionisation thresholds in silicon and germanium under hydrostatic pressure and strain;IEE Proceedings J Optoelectronics;1990
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