A note on the theory of the quantum efficiency of germanium and silicon
Author:
Publisher
Springer Science and Business Media LLC
Subject
General Physics and Astronomy
Link
http://link.springer.com/content/pdf/10.1007/BF01612086.pdf
Reference3 articles.
1. Antončík E.: Czechosl. Journ. Phys.7 (1957), 674.
2. Brooks H.: Advances in Electronics VII, New York, 1955, 85.
3. See e. g. [1], footnote on page 680.
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1. Aspects of the Theory of Impact Ionization in Semiconductors (I);physica status solidi (b);1980-01-01
2. Impact ionization thresholds in semiconductors;Journal of Physics C: Solid State Physics;1973-08-20
3. Band-to-Band Radiative Recombination in Groups IV, VI, and III-V Semiconductors (I);physica status solidi (b);1967
4. Quantum Efficiency of Silicon in the Vacuum Ultraviolet;Physical Review;1964-04-06
5. Impact Ionization Threshold in Semiconductors;Proceedings of the Physical Society;1963-12
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