Photothermal capacitance measurements on GaP:Ni
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,General Engineering,Condensed Matter Physics
Link
http://stacks.iop.org/0022-3719/17/i=16/a=016/pdf
Reference14 articles.
1. Absorption Spectrum of Nickel in Gallium Phosphide
2. Photoluminescence excitation spectroscopy of 3d transition-metal ions in GaP and ZnSe
3. Optical investigations of the states in GaP:Ni
4. Tellurium donors in silicon
Cited by 7 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Photoinduced recharging process of NiGain GaP and paramagnetic resonance of NiGa2+;Journal of Physics: Condensed Matter;1991-08-19
2. Junction capacitance techniques for a deep centre showing photothermal ionization, with GaP:Ni d9as an example;Semiconductor Science and Technology;1991-04-01
3. A study of a deep centre with an excited state: photo-thermal excitation behaviour by junction capacitance techniques;Journal of Luminescence;1988-02
4. Transition metal impurities in compound semiconductors: Experimental situation;Materials Chemistry and Physics;1987-03
5. Transition-metal impurities in III-V compounds;Journal of Physics C: Solid State Physics;1985-07-10
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