The observation of strain effects in the photoluminescence spectrum of excitons bound to neutral acceptors in indium phosphide-Reference-Cited by-同舟云学术

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The observation of strain effects in the photoluminescence spectrum of excitons bound to neutral acceptors in indium phosphide

Published:1972-05-25 Issue:10 Volume:5 Page:L110-L112
ISSN:0022-3719
Container-title:Journal of Physics C: Solid State Physics
language:
Short-container-title:J. Phys. C: Solid State Phys.

Author:

White A M,Dean P J,Taylor L L,Clarke R C

Publisher

IOP Publishing

Subject

General Physics and Astronomy,General Engineering,Condensed Matter Physics

Link

http://stacks.iop.org/0022-3719/5/i=10/a=002/pdf

Reference3 articles.

1. Stress Dependence of Photoluminescence in GaAs

2. Exciton Recombination Radiation of GaAs: Zn

Cited by 8 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Effect of Twinning on the Photoluminescence and Photoelectrochemical Properties of Indium Phosphide Nanowires Grown on Silicon (111);Nano Letters;2008-11-04

2. Spectroscopy of bound excitons in cubic ZnS at moderate to high excitation densities;Physical Review B;1989-02-15

3. Excitonic Complexes in Wide-Gap II-VI Semiconductors;Growth and Optical Properties of Wide-Gap II–VI Low-Dimensional Semiconductors;1989

4. Magneto-optical study of Li and Na acceptor bound excitons in CdTe: Fine structure and cubic crystal-field effect;Physical Review B;1985-07-15

5. Photoluminescence as a diagnostic of semiconductors;Progress in Crystal Growth and Characterization;1982-01

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