The effect of non-exponential transients on the determination of deep-trap activation energies by deep-level transient spectroscopy
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,General Engineering,Condensed Matter Physics
Link
http://stacks.iop.org/0022-3719/12/i=22/a=024/pdf
Reference2 articles.
1. Deep‐level transient spectroscopy: A new method to characterize traps in semiconductors
2. Deep traps in ideal n-InP Schottky diodes
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3. Deep levels in GaAs/AlGaAs multi-quantum well structures;Journal of Materials Science: Materials in Electronics;1990-08
4. Distribution of Deep Level Parameters in Spectral Analysis of DLTS (SADLTS);Japanese Journal of Applied Physics;1988-04-20
5. Spectral Analysis of Deep Level Transient Spectroscopy (SADLTS);Japanese Journal of Applied Physics;1987-10-20
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