The alloy scattering potential from mobility analysis in Ga0.47In0.53As
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,General Engineering,Condensed Matter Physics
Link
http://stacks.iop.org/0022-3719/19/i=8/a=003/pdf
Reference11 articles.
1. Scattering mechanisms inHg1−xCdxTe
2. Electron scattering by ionized impurities in semiconductors
3. Alloy scattering in ternary III-V compounds
4. Alloy scattering and high field transport in ternary and quaternary III–V semiconductors
Cited by 5 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Determination of the alloy scattering potential in modulation-doped In0.53Ga0.47As/In0.52Al0.48As heterojunctions from magnetotransport measurements;Journal of Materials Science;2005-10-25
2. Effect of alloy scattering on the cyclotron resonance linewidth in Ga0.47In0.53 as at low temperatures;Journal of Physics and Chemistry of Solids;1992-05
3. Transport properties of praseodymium doped p-type In0.53Ga0.47As layers;Solid State Communications;1991-05
4. Estimation of the Alloy Scattering Potential in Ga0.47In0.53As Using Cyclotron Resonance Measurements;physica status solidi (b);1989-12-01
5. Molecular coherent-potential approximation for zinc-blende pseudobinary alloys;Physical Review B;1987-07-15
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