Photoluminescence studies of deep traps in GaP:Fe
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,General Engineering,Condensed Matter Physics
Link
http://stacks.iop.org/0022-3719/13/i=30/a=025/pdf
Reference16 articles.
1. Crystal-Field Spectra of3dnImpurities in II-VI and III-V Compound Semiconductors
2. Photoluminescence excitation spectroscopy of 3d transition-metal ions in GaP and ZnSe
3. Nickel, a persistent inadvertent contaminant in device-grade vapour epitaxially grown gallium phosphide
4. Dynamical Jahn-Teller Effect in Paramagnetic Resonance Spectra: Orbital Reduction Factors and Partial Quenching of Spin-Orbit Interaction
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