On the application of the Meyer-Neldel rule to a-Si:H
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,General Engineering,Condensed Matter Physics
Link
http://stacks.iop.org/0022-3719/16/i=34/a=010/pdf
Reference14 articles.
1. Transport properties of a-Si: H alloys prepared by r.f. sputtering I
2. Transport properties of a-Si: H alloys prepared by r.f. sputtering
3. Photo-induced changes in the coefficient of the temperature dependence of the Fermi level in discharge-produced amorphous silicon
4. Characterized of glow-discharge deposited a-Si:H
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