A model for the interpretation of measurements of photoionisation and capture cross sections associated with deep-level impurities
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,General Engineering,Condensed Matter Physics
Link
http://stacks.iop.org/0022-3719/14/i=9/a=012/pdf
Reference35 articles.
1. A comparison of simple theoretical models for the photoionisation of impurities in semiconductors
2. Selection rules for multiphonon transitions at tetrahedral lattice sites
3. Shallow impurity states in semiconductors: Absorption cross-sections, excitation rates, and capture cross-sections
4. Photoconductivity in n-type GaAs:O associated with the deep level at 0.4 eV
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