Variable range hopping conductivity in copper-indium-gallium-selenium-tellurium solid solutions-Reference-Cited by-同舟云学术

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Variable range hopping conductivity in copper-indium-gallium-selenium-tellurium solid solutions

Published:1982-09-10 Issue:25 Volume:15 Page:L875-L878
ISSN:0022-3719
Container-title:Journal of Physics C: Solid State Physics
language:
Short-container-title:J. Phys. C: Solid State Phys.

Author:

Ilowski J J,Berezin A A

Publisher

IOP Publishing

Subject

General Physics and Astronomy,General Engineering,Condensed Matter Physics

Link

http://stacks.iop.org/0022-3719/15/i=25/a=005/pdf

Reference6 articles.

1. Cu(1−y)AgyInS2(1−x)Se2x as a prototype of the pentanary chalcopyrite semiconductor system for solar photovoltaic cells

2. Evaluation of Mott's Parameters for Hopping Conduction in Amorphous Ge, Si, and Se-Si

3. A Computer Controlled Automatic System for Measuring the Conductivity and Hall Effect in Semiconducting Samples

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Hall-effect and resistivity measurements in copper–indium–gallium–selenium–tellurium solid solutions;Canadian Journal of Physics;1985-06-01

2. Effect of thermal annealing on optical and electrical properties of rf sputtered amorphous silicon;Journal of Applied Physics;1984-04-15

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