Hall-effect and resistivity measurements in copper–indium–gallium–selenium–tellurium solid solutions

Abstract

Hall-effect and resistivity measurements of semiconductor alloys of the type Culn1−yGaySe2(1−x)Te2x have been made over the temperature range 77–300 K. All materials were p-type with mobilities in the range 1 < μ < 10 cm2/V∙s. The observed electrical properties are interpreted in terms of the presence of intrinsic defects arising from dissimilar evaporation of the constituent elements of the materials during melting and annealing stages.