The electric quadrupole hyperfine interaction at sites of ion-implanted fluorine in amorphous and crystalline silicon-Reference-Cited by-同舟云学术

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The electric quadrupole hyperfine interaction at sites of ion-implanted fluorine in amorphous and crystalline silicon

Published:1984-07-20 Issue:20 Volume:17 Page:3519-3530
ISSN:0022-3719
Container-title:Journal of Physics C: Solid State Physics
language:
Short-container-title:J. Phys. C: Solid State Phys.

Author:

Nielsen K B,Schou H K,Lauritsen T,Weyer G,Stensgaard I,Petersen J W,Damgaard S

Publisher

IOP Publishing

Subject

General Physics and Astronomy,General Engineering,Condensed Matter Physics

Link

http://stacks.iop.org/0022-3719/17/i=20/a=005/pdf

Reference30 articles.

1. On the structure of fluorine defects in amorphous and crystalline silicon studied by hyperfine interaction and channeling methods

2. Infrared and Raman spectra of the silicon-hydrogen bonds in amorphous silicon prepared by glow discharge and sputtering

Cited by 18 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Lattice site investigation of F in preamorphized Si;Physical Review B;2007-07-05

2. Halogens;Computational Microelectronics;2004

3. Development of On-Line Perturbed Angular Correlation;Chinese Physics Letters;2002-06-28

4. Study of the Location of Implanted Fluorine Atoms in Silicon and Germanium through Their Nuclear Quadrupole Interactions;Zeitschrift für Naturforschung A;1996-06-01

5. Formation of shallow donor in fluorine‐implanted silicon;Journal of Applied Physics;1996-02

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