The adsorption of water on InP and its influence on Schottky barrier formation
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,General Engineering,Condensed Matter Physics
Link
http://stacks.iop.org/0022-3719/15/i=28/a=020/pdf
Reference26 articles.
1. Self-consistent pseudopotential calculation for the relaxed (110) surface of GaAs
2. An investigation by electron spectroscopy for chemical analysis of chemical treatments of the (100) surface of n-type InP epitaxial layers for Langmuir film deposition
3. Schottky and Bardeen limits for Schottky barriers
4. Vacancies near semiconductor surfaces
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