Study of the dose rate effect of 180 nm nMOSFETs-Reference-Cited by-同舟云学术

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Study of the dose rate effect of 180 nm nMOSFETs

Published:2015-01 Issue:1 Volume:39 Page:016004
ISSN:1674-1137
Container-title:Chinese Physics C
language:
Short-container-title:Chinese Phys. C

Author:

He Bao-Ping,Yao Zhi-Bin,Sheng Jiang-Kun,Wang Zu-Jun,Huang Shao-Yan,Liu Min-Bo,Xiao Zhi-Gang

Publisher

IOP Publishing

Subject

Astronomy and Astrophysics,Instrumentation,Nuclear and High Energy Physics

Link

https://iopscience.iop.org/article/10.1088/1674-1137/39/1/016004/pdf

Reference14 articles.

1. Total ionizing dose effects in bipolar devices and circuits

2. Failure Modes and Hardness Assurance for Linear Integrated Circuits in Space Applications

3. Modeling of Radiation-Induced Leakage and Low Dose-Rate Effects in Thick Edge Isolation of Modern MOSFETs

4. A comparison of ionizing radiation damage in CMOS devices from60Co gamma rays, electrons and protons

5. A study of radiation effects of 9 and 12 MeV protons on Chinese CMOS image sensor degradation

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Degradation and annealing characteristics of NPN SiGe HBT exposed to heavy ions irradiation;Radiation Physics and Chemistry;2019-12

2. Total ionizing dose effect of gamma rays on H-gate PDSOI MOS devices at different dose rates;Nuclear Science and Techniques;2017-09-09

3. Effects of total dose irradiation on the threshold voltage of H-gate SOI NMOS devices;Nuclear Science and Techniques;2016-08-30

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