Total ionizing dose effects of domestic SiGe HBTs under different dose rates-Reference-Cited by-同舟云学术

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Total ionizing dose effects of domestic SiGe HBTs under different dose rates

Published:2016-03 Issue:3 Volume:40 Page:036003
ISSN:1674-1137
Container-title:Chinese Physics C
language:
Short-container-title:Chinese Phys. C

Author:

Liu Mo-Han,Lu Wu,Ma Wu-Ying,Wang Xin,Guo Qi,He Cheng-Fa,Jiang Ke,Li Xiao-Long,Xun Ming-Zhu

Publisher

IOP Publishing

Subject

Astronomy and Astrophysics,Instrumentation,Nuclear and High Energy Physics

Link

https://iopscience.iop.org/article/10.1088/1674-1137/40/3/036003/pdf

Reference15 articles.

1. SiGe HBT technology: a new contender for Si-based RF and microwave circuit applications

2. Radiation Effects in SiGe Technology

3. Ionizing radiation tolerance of high-performance SiGe HBT's grown by UHV/CVD

4. A comparison of the effects of gamma irradiation on SiGe HBT and GaAs HBT technologies

5. The impact of gamma irradiation on SiGe HBTs operating at cryogenic temperatures

Cited by 16 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Effect of 60Coγ ray radiation on electrical properties of SiGe HBTs at low temperatures;Microelectronics Journal;2024-02

2. Angular dependence of proton-induced single event transient in silicon-germanium heterojunction bipolar transistors;Chinese Physics B;2022-07-01

3. Proton-induced current transient in SiGe HBT and charge collection model based on Monte Carlo simulation;Science China Technological Sciences;2020-03-20

4. Impact of layout and profile optimization for inverse-mode SiGe HBT on SET and TID responses;Microelectronics Reliability;2020-02

5. Degradation and annealing characteristics of NPN SiGe HBT exposed to heavy ions irradiation;Radiation Physics and Chemistry;2019-12

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