A review of ultra-thin ferroelectric films
Author:
Funder
National Natural Science Foundation of China
Publisher
IOP Publishing
Subject
Condensed Matter Physics,General Materials Science
Link
https://iopscience.iop.org/article/10.1088/1361-648X/ac145c/pdf
Reference117 articles.
1. Ferroelectric Memories
2. Pulse Switching Study on the HfZrO Ferroelectric Films With High Pressure Annealing
3. Effects of high pressure nitrogen annealing on ferroelectric Hf0.5Zr0.5O2 films
4. Mitigating wakeup effect and improving endurance of ferroelectric HfO2-ZrO2 thin films by careful La-doping
5. Ten-Nanometer Ferroelectric $\hbox{Si:HfO}_{2}$ Films for Next-Generation FRAM Capacitors
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