Electrical conductivity of In2O3and Ga2O3after low temperature ion irradiation; implications for instrinsic defect formation and charge neutrality level-Reference-Cited by-同舟云学术

Electrical conductivity of In2O3and Ga2O3after low temperature ion irradiation; implications for instrinsic defect formation and charge neutrality level

Published:2017-12-13 Issue:2 Volume:30 Page:025502
ISSN:0953-8984
Container-title:Journal of Physics: Condensed Matter
language:
Short-container-title:J. Phys.: Condens. Matter

Author:

Vines L^ORCID,Bhoodoo C^ORCID,von Wenckstern H,Grundmann M^ORCID

Funder

Norges Forskningsråd

Publisher

IOP Publishing

Subject

Condensed Matter Physics,General Materials Science

Link

http://iopscience.iop.org/article/10.1088/1361-648X/aa9e2a/pdf

Reference38 articles.

1. Tin doped indium oxide thin films: Electrical properties

2. Schottky contacts to In2O3

3. Sol-gel prepared β-Ga2O3 thin films for ultraviolet photodetectors

4. Recent progress in Ga2O3power devices

5. Mean-value point and dielectric properties of semiconductors and insulators

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