Electrical conductivity of In2O3and Ga2O3after low temperature ion irradiation; implications for instrinsic defect formation and charge neutrality level

Author:

Vines LORCID,Bhoodoo CORCID,von Wenckstern H,Grundmann MORCID

Funder

Norges Forskningsråd

Publisher

IOP Publishing

Subject

Condensed Matter Physics,General Materials Science

Cited by 17 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

1. Native defects association enabled room-temperature p-type conductivity in β-Ga2O3;Journal of Alloys and Compounds;2023-12

2. Schottky barrier height and contact resistivity reduction of metal/GaOx/n-GaN structure;2023 IEEE International Interconnect Technology Conference (IITC) and IEEE Materials for Advanced Metallization Conference (MAM)(IITC/MAM);2023-05

3. Effects of Oxide Species on the Reduction of Contact Resistivity of Al/oxide/n-GaN MIS Devices;2023 7th IEEE Electron Devices Technology & Manufacturing Conference (EDTM);2023-03-07

4. Control and understanding of metal contacts to β-Ga2O3 single crystals: a review;SN Applied Sciences;2021-12-18

5. Fermi level controlled point defect balance in ion irradiated indium oxide;Journal of Applied Physics;2021-08-28

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