Absence of single critical dose for the amorphization of quartz under ion irradiation
Author:
Funder
National Natural Science Foundation of China
Publisher
IOP Publishing
Subject
Condensed Matter Physics,General Materials Science
Link
http://iopscience.iop.org/article/10.1088/1361-648X/aa9868/pdf
Reference61 articles.
1. Atomic structure of ion implantation damage and process of amorphization in semiconductors
2. High resolution and in situ investigation of defects in Bi-irradiated Si
3. Amorphization processes in electron and/or ion-irradiated silicon
4. Amorphization processes in self‐ion‐implanted Si: Dose dependence
5. Range profiles in self-ion-implanted crystalline Si
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