Pressure-dependent semiconductor to semimetal and Lifshitz transitions in 2H-MoTe2: Raman and first-principles studies
Author:
Publisher
IOP Publishing
Subject
Condensed Matter Physics,General Materials Science
Link
http://stacks.iop.org/0953-8984/29/i=10/a=105403/pdf
Reference49 articles.
1. Insights into Vibrational and Electronic Properties of MoS2 Using Raman, Photoluminescence, and Transport Studies
2. Atomically ThinMoS2: A New Direct-Gap Semiconductor
3. Direct Imaging of Band Profile in Single Layer MoS2 on Graphite: Quasiparticle Energy Gap, Metallic Edge States, and Edge Band Bending
4. Optical signature of symmetry variations and spin-valley coupling in atomically thin tungsten dichalcogenides
5. Controlled Synthesis and Transfer of Large-Area WS2 Sheets: From Single Layer to Few Layers
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