Fluence dependent dynamics of excitons in monolayer MoSi2Z4 (Z = pnictogen)

Author:

Yadav PushpendraORCID,Khamari Bramhachari,Singh Bahadur,Adarsh K V,Agarwal AmitORCID

Abstract

Abstract Reduced dielectric screening in two-dimensional materials enables bound excitons, which modifies their optical absorption and optoelectronic response. Here, we demonstrate the existence of excitons in the bandgap of the monolayer family of the newly discovered synthetic M o S i 2 Z 4 (Z=N, P, and As) series of materials. All three monolayers support several bright and strongly bound excitons with binding energies varying from 1 eV to 1.35 eV for the lowest energy exciton resonances. We show that on increasing the pump fluence or photo-excited carrier density, the lowest energy exciton first undergoes a redshift followed by a blueshift, due to the renormalized exciton binding energies. The exciton binding energy varies as a Lennard-Jones-like potential as a function of the inter-exciton spacing. This establishes an atom-like attractive and repulsive interaction between excitons depending on the inter-exciton separation. Our study shows that the M o S i 2 Z 4 series of monolayers offer an exciting test-bed for exploring the physics of strongly bound excitons and their non-equilibrium dynamics.

Funder

Department of Science and Technology (DST), Government of India

Ministry of Electronics and Information technology

DAE

UGC for Senior Research Fellowship

Government of India

Department of Science and Technology

Dr. Sitangshu Bhattacharya

Science and Engineering Research Board

Department of Atomic Energy of the Government of India

Dr. Barun Ghosh

TIFR

Publisher

IOP Publishing

Subject

Condensed Matter Physics,General Materials Science

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