Room-Temperature Ferroelectricity, Ferromagnetism, and Anomalous Hall Effect in Half-Metallic Monolayer CrTe-Reference-Cited by-同舟云学术

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Room-Temperature Ferroelectricity, Ferromagnetism, and Anomalous Hall Effect in Half-Metallic Monolayer CrTe

Published:2024-05-09 Issue:5 Volume:6 Page:3810-3819
ISSN:2637-6113
Container-title:ACS Applied Electronic Materials
language:en
Short-container-title:ACS Appl. Electron. Mater.

Author:

Ahamed Imran¹²^ORCID,Chakraborty Atasi³⁴,Yadav Pushpendra⁴,Dey Rik²,Chauhan Yogesh Singh²,Bhowmick Somnath⁵^ORCID,Agarwal Amit⁴^ORCID

Affiliation:

1. Institute of Physics, Nicolaus Copernicus University in Torun, Torun 87-100, Poland

2. Department of Electrical Engineering, Indian Institute of Technology, Kanpur 208016, India

3. Institut für Physik, Johannes Gutenberg Universität Mainz, D-55099 Mainz, Germany

4. Department of Physics, Indian Institute of Technology, Kanpur 208016, India

5. Department of Materials Science and Engineering, Indian Institute of Technology, Kanpur 208016, India

Funder

Science and Engineering Research Board

Department of Science and Technology, Ministry of Science and Technology, India

Alexander von Humboldt-Stiftung

Publisher

American Chemical Society (ACS)

Link

https://pubs.acs.org/doi/pdf/10.1021/acsaelm.4c00205

Reference104 articles.

1. Black phosphorus field-effect transistors

2. Single-layer MoS2 transistors

3. Two-Dimensional MoSi2N4: An Excellent 2-D Semiconductor for Field-Effect Transistors

4. Berry curvature dipole senses topological transition in a moiré superlattice

5. Nonlinear anomalous Hall effects probe topological phase-transitions in twisted double bilayer graphene

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