Radiation Response of AI2O3 based Metal-Oxide-Semiconductor Structures under Gamma-ray

Abstract

Abstract The radiation effect in aluminium oxide based MOS capacitors is studied in this article. The radiation induced oxide and interface trapped charge characteristic as well as the leakage current and charge transportation mechanism are studied by using Capacitance-Voltage and Current-Voltage measurements. The results show that the radiation induced oxide and interface trapped charges are both positive with the density in the order of 1012cm-2 which increase with the increase of irradiation total dose, the charge transport is dominated by Schottky mechanism and the leakage current as well as the trap barrier height rarely change after irradiation. This provides a reference for the application of Al2O3 based MOS devices in space environment.