60Co γ-rays irradiation effect in DC performance of AlGaN/GaN high electron mobility transistors-Reference-Cited by-同舟云学术

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60Co γ-rays irradiation effect in DC performance of AlGaN/GaN high electron mobility transistors

Published:2009-04 Issue:4 Volume:30 Page:044002
ISSN:1674-4926
Container-title:Journal of Semiconductors
language:
Short-container-title:J. Semicond.

Author:

Wenping Gu,Chi Chen,Huantao Duan,Yue Hao,Jincheng Zhang,Chong Wang,Qian Feng,Xiaohua Ma

Publisher

IOP Publishing

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference11 articles.

1. Large periphery high-power AlGaN/GaN metal-oxide-semiconductor heterostructure field effect transistors on SiC with oxide-bridging

2. Current instabilities in GaN-based devices

3. Very-high power density AlGaN/GaN HEMTs

4. Defect Donor and Acceptor in GaN

Cited by 16 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Ionizing radiation defects and reliability of Gallium Nitride-based III-V semiconductor devices: A comprehensive review;Microelectronics Reliability;2024-08

2. Radiation damage in GaN/AlGaN and SiC electronic and photonic devices;Journal of Vacuum Science & Technology B;2023-04-19

3. Localized strain relaxation effect on gamma irradiated AlGaN/GaN high electron mobility transistors;Applied Physics Letters;2022-12-05

4. Temperature-Dependent Dynamic on Resistance in Gamma-Irradiated AlGaN/GaN Power HEMTs;Applied Sciences;2022-11-15

5. Investigation of trapping effects in Schottky lightly doped P-GaN gate stack under γ-ray irradiation;Applied Physics Letters;2022-10-03

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