Total ionizing dose radiation effects on NMOS parasitic transistors in advanced bulk CMOS technology devices-Reference-Cited by-同舟云学术

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Total ionizing dose radiation effects on NMOS parasitic transistors in advanced bulk CMOS technology devices

Published:2016-11-24 Issue:12 Volume:37 Page:124003
ISSN:1674-4926
Container-title:Journal of Semiconductors
language:
Short-container-title:J. Semicond.

Author:

He Baoping,Wang Zujun,Sheng Jiangkun,Huang Shaoyan

Publisher

IOP Publishing

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://stacks.iop.org/1674-4926/37/i=12/a=124003/pdf

Reference27 articles.

1. Total-Ionizing-Dose Effects in Modern CMOS Technologies

2. Enhanced TID Susceptibility in Sub-100 nm Bulk CMOS I/O Transistors and Circuits

3. Radiation-induced edge effects in deep submicron CMOS transistors

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1. Comparison of Total Ionizing Dose Effect on Tolerance of SCL 180 nm Bulk and SOI CMOS Using TCAD Simulation;Lecture Notes in Electrical Engineering;2022-12-04

2. Impurity-modulated optical response of a disc-shaped quantum dot subjected to laser radiation;Photonics and Nanostructures - Fundamentals and Applications;2020-02

3. Research for radiation-hardened high-voltage SOI LDMOS;Journal of Semiconductors;2019-05-01

4. Impurity-related optical properties of a laser-driven quantum dot;Physica E: Low-dimensional Systems and Nanostructures;2018-08

5. Third-harmonic generation of a laser-driven quantum dot with impurity;Physica B: Condensed Matter;2018-06

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