The influence of Fe doping on the surface topography of GaN epitaxial material-Reference-Cited by-同舟云学术

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The influence of Fe doping on the surface topography of GaN epitaxial material

Published:2015-10 Issue:10 Volume:36 Page:103002
ISSN:1674-4926
Container-title:Journal of Semiconductors
language:
Short-container-title:J. Semicond.

Author:

Cui Lei,Yin Haibo,Jiang Lijuan,Wang Quan,Feng Chun,Xiao Hongling,Wang Cuimei,Gong Jiamin,Zhang Bo,Li Baiquan,Wang Xiaoliang,Wang Zhanguo

Publisher

IOP Publishing

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://stacks.iop.org/1674-4926/36/i=10/a=103002/pdf

Reference14 articles.

1. AlGaN/AlN/GaN/SiC HEMT structure with high mobility GaN thin layer as channel grown by MOCVD

2. Investigation of optical quenching of photoconductivity in high-resistivity GaN epilayer

Cited by 12 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Buckling on Fe‐Doped AlGaN/GaN High Electron Mobility Transistor Films after Laser Liftoff Process: Phenomena and Mechanism;physica status solidi (a);2021-04-21

2. Dislocation structure of the AlGaN/GaN/α-Al2O3 heterostructures epitaxial layers at doping GaN with С and Fe;Izvestiya Vysshikh Uchebnykh Zavedenii. Materialy Elektronnoi Tekhniki = Materials of Electronics Engineering;2021-01-27

3. Estimating the Crystallographic Structure of AlGaN/GaN Heterostructure Buffer Layers Using Symmetric and Asymmetric X-ray Schemes;Journal of Surface Investigation: X-ray, Synchrotron and Neutron Techniques;2019-07

4. Insulating GaN Epilayers Co-Doped with Iron and Carbon;Technical Physics Letters;2019-07

5. Dislocation Structure of Epitaxial Layers of AlGaN/GaN/α-Al2O3 Heterostructures Containing a GaN Layer Doped with Carbon and Iron;Russian Microelectronics;2018-12

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