Estimating the Crystallographic Structure of AlGaN/GaN Heterostructure Buffer Layers Using Symmetric and Asymmetric X-ray Schemes-Reference-Cited by-同舟云学术

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Estimating the Crystallographic Structure of AlGaN/GaN Heterostructure Buffer Layers Using Symmetric and Asymmetric X-ray Schemes

Published:2019-07 Issue:4 Volume:13 Page:578-585
ISSN:1027-4510
Container-title:Journal of Surface Investigation: X-ray, Synchrotron and Neutron Techniques
language:en
Short-container-title:J. Synch. Investig.

Author:

Lutzau A. V.,Temper E. M.,Enisherlova K. L.

Publisher

Pleiades Publishing Ltd

Subject

Surfaces, Coatings and Films

Link

http://link.springer.com/content/pdf/10.1134/S1027451019040104.pdf

Reference12 articles.

1. A. G. Vasil’ev, Yu. V. Kolkovskii, and Yu. A. Kontsevoi, UHF Instruments and Appliances Based on Broadband Semiconductors (Tekhnosfera, Moscow, 2011) [In Russian].

2. Gallium Nitride (GaN): Physics, Devices and Technology, Ed, by F. Medjdoub and K. Iniewski (CRC Press Taylor & Francis Group, London-New York, 2016).

3. R. Stevenson, Compd. Semicond., 12 (11), 31 (2006).

4. K. L. Enisherlova, A. V. Lyuttsau, and E. M. Temper, Single-Crystal X-Ray Diffractometry of Heterostructures (Yulis, Moscow, 2016) [In Russian].

5. Chap. 7;A. Trampert,1998

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