Quantum mechanical compact modeling of symmetric double-gate MOSFETs using variational approach-Reference-Cited by-同舟云学术

Quantum mechanical compact modeling of symmetric double-gate MOSFETs using variational approach

Published:2012-03 Issue:3 Volume:33 Page:034001
ISSN:1674-4926
Container-title:Journal of Semiconductors
language:
Short-container-title:J. Semicond.

Author:

Vimala P.,Balamurugan N. B.

Publisher

IOP Publishing

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference20 articles.

1. Speed superiority of scaled double-gate CMOS

2. Properties of Semiconductor Surface Inversion Layers in the Electric Quantum Limit

3. Self-Consistent Results forn-Type Si Inversion Layers

4. Experimental Verification of the Surface Quantization of ann-Type Inversion Layer of Silicon at 300 and 77°K

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