Preface to Special Issue on Towards High Performance Ga<sub>2</sub>O<sub>3</sub> Electronics: Power Devices and DUV Optoelectronic Devices (Ⅱ)-Reference-Cited by-同舟云学术

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Preface to Special Issue on Towards High Performance Ga₂O₃ Electronics: Power Devices and DUV Optoelectronic Devices (Ⅱ)

Published:2023-07-01 Issue:7 Volume:44 Page:070101
ISSN:1674-4926
Container-title:Journal of Semiconductors
language:
Short-container-title:J. Semicond.

Author:

Long Shibing,Han Genquan,Zhang Yuhao,Wang Yibo,Wei Zhongming

Publisher

IOP Publishing

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

https://iopscience.iop.org/article/10.1088/1674-4926/44/7/070101/pdf

Reference10 articles.

1. Tunneling via surface dislocation in W/β-Ga2O3 Schottky barrier diodes;Labed;J Semicond,2023

2. 2.83-kV double-layered NiO/β-Ga2O3 vertical p–n heterojunction diode with a power figure-of-merit of 5.98 GW/cm2;Han;J Semicond,2023

3. Experimental investigation on the instability for NiO/β-Ga2O3 heterojunction-gate FETs under negative bias stress;Jiang;J Semicond,2023

4. A large-area multi-finger β-Ga2O3 MOSFET and its self-heating effect;X;J Semicond,2023

5. Large-area β-Ga2O3 Schottky barrier diode and its application in DC–DC converters;W;J Semicond,2023

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