SRAM single event upset calculation and test using protons in the secondary beam in the BEPC-Reference-Cited by-同舟云学术

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SRAM single event upset calculation and test using protons in the secondary beam in the BEPC

Published:2011-09 Issue:9 Volume:32 Page:092001
ISSN:1674-4926
Container-title:Journal of Semiconductors
language:
Short-container-title:J. Semicond.

Author:

Wang Yuanming,Guo Hongxia,Zhang Fengqi,Zhang Keying,Chen Wei,Luo Yinhong,Guo Xiaoqiang

Publisher

IOP Publishing

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference14 articles.

1. Energy Spectra of Heavy Fragments from the Interaction of Protons with Communications Materials

2. Characterization of proton interactions in electronic components

3. Two parameter model for predicting SEU rate [memory devices]

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Analysis of Proton-induced Single Event Effect in the On-Chip Memory of Embedded Process;2022 IEEE International Symposium on Defect and Fault Tolerance in VLSI and Nanotechnology Systems (DFT);2022-10-19

2. Single Event Upsets characterization of 65 nm CMOS 6T and 8T SRAM cells for ground level environment;Microelectronics Reliability;2020-07

3. Soft error rate comparison of 6T and 8T SRAM ICs using mono-energetic proton and neutron irradiation sources;Microelectronics Reliability;2017-11

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