Compact analytical model for single gate AlInSb/InSb high electron mobility transistors-Reference-Cited by-同舟云学术

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Compact analytical model for single gate AlInSb/InSb high electron mobility transistors

Published:2014-11 Issue:11 Volume:35 Page:114003
ISSN:1674-4926
Container-title:Journal of Semiconductors
language:
Short-container-title:J. Semicond.

Author:

Chandra S. Theodore,Balamurugan N. B.,Subalakshmi G.,Shalini T.,Priya G. Lakshmi

Publisher

IOP Publishing

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://stacks.iop.org/1674-4926/35/i=11/a=114003/pdf

Reference16 articles.

1. Growth and applications of Group III-nitrides

2. AlGaN/GaN high electron mobility transistors with InGaN back-barriers

3. Low-Frequency Noise in AlSb/InAs and Related HEMTs

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1. Optimizing Device Dimensions for Dual Material Junctionless Tree-FET: A Path to Improved Analog/RF Performance;ECS Journal of Solid State Science and Technology;2024-07-01

2. Numerical Investigation of Zero-Dimensional Freestanding Nanowire FER-AlGaN/GaN HEMTs for Low-Power Applications;Arabian Journal for Science and Engineering;2024-02-05

3. A 2-D Modeling of Fe doped Dual Material Gate AlGaN/AlN/GaN High Electron Mobility Transistors for High Frequency Applications;AEU - International Journal of Electronics and Communications;2019-05

4. Modeling and simulation of dual‐material‐gate AlGaN/GaN high‐electron‐mobility transistor using finite difference method;International Journal of Numerical Modelling: Electronic Networks, Devices and Fields;2019-01-23

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