Influence of growth conditions of oxide on electrical properties of AlGaN/GaN metal–insulator–semiconductor transistors
Author:
Publisher
IOP Publishing
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Link
http://stacks.iop.org/1674-4926/40/i=4/a=042801/pdf
Reference34 articles.
1. Hot electron transport in wurtzite-GaN: effects of temperature and doping concentration
2. Performance enhancement of the GaN-based laser diode by using an unintentionally doped GaN upper waveguide
3. Piezo-Phototronic Effect in a Quantum Well Structure
4. Implementation of slow and smooth etching of GaN by inductively coupled plasma
5. AlN Surface Passivation of GaN-Based High Electron Mobility Transistors by Plasma-Enhanced Atomic Layer Deposition
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